Reasonable price for Copper Foil For Graphene Growth - Hyper Very Low Profile Copper Foil For High speed digital – JM

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Reasonable price for Copper Foil For Graphene Growth - Hyper Very Low Profile Copper Foil For High speed digital – JM Detail:

Features

● Ultra low profile with high peel strength and good etch ability
● Use Low coarsening technology, the microstructure makes it an excellent material to apply to high frequency transmission circuit
● The treated foil is pink

Typical application

● High frequency transmission circuit
● Base station/Server
● High speed digital
● PPO/PPE

Typical Properties of Hyper Very Low profile Copper Foil

Classification		Unit	Test Method			Test Method
Nominal thickness		Um	12	18	35	IPC-4562A
Area Weight		g/m²	107±5	153±7	285±10	IPC-TM-650 2.2.12.2
Purity		%	≥99.8			IPC-TM-650 2.3.15
Roughness	Shiny side (Ra)	սm	≤0.43	≤0.43	≤0.43	IPC-TM-650 2.3.17
Roughness	Matte side(Rz)	um	1.5-2.0	1.5-2.0	1.5-2.0
Tensile Strength	R.T.(23°C)	Mpa	≥300	≥300	≥300	IPC-TM-650 2.4.18
Tensile Strength	H.T.(180°C)	Mpa	≥180	≥180	≥180
Elongation	R.T.(23°C)	%	≥5	≥6	≥8	IPC-TM-650 2.4.18
Elongation	H.T.(180°C)	%	≥6	≥6	≥6
Pinholes & Porosity		Number	No			IPC-TM-650 2.1.2
Peel Strength		N/mm	≥0.6	≥0.8	≥1.0	IPC-TM-650 2.4.8
Peel Strength		Lbs/in	≥3.4	≥4.6	≥5.7	IPC-TM-650 2.4.8
Anti-oxidization	R.T.(23°C)	Days	90
Anti-oxidization	R.T.(200°C)	Minutes	40

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Fast and great quotations, informed advisers to help you choose the correct product that suits all your preferences, a short creation time, responsible top quality control and different services for paying and shipping affairs for Reasonable price for Copper Foil For Graphene Growth - Hyper Very Low Profile Copper Foil For High speed digital – JM , The product will supply to all over the world, such as: Cambodia, Panama, Italy, We are looking forward to cooperating closely with you to our mutual benefits and top development. We guaranteed quality, if customers were not satisfied with the products' quality, you can return within 7days with their original states.

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